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FDS6993 - Dual P-Channel PowerTrench MOSFET

General Description

These P-Channel MOSFETs are made using FSC’s PowerTrench® technology.

They are packaged in a single SO-8 which is designed to allow two MOSFETs to operate independenly, each with it’s own heat sink.

The combination of silicon and package technologies results in minimum board space and cost.

Key Features

  • Q1: P-Channel.
  • 4.3A,.
  • 30V RDS(on) = 55mΩ @ VGS =.
  • 10V.
  • Q2: RDS(on) = 85mΩ @ VGS =.
  • 4.5V P-Channel.
  • 6.8A,.
  • 12V RDS(on) = 17mΩ @ VGS =.
  • 4.5V RDS(on) = 24mΩ @ VGS =.
  • 2.5V.
  • RDS(on) = 30mΩ @ VGS =.
  • 1.8V High power and handling capability in a widely used surface mount package D1 D D1 D DD2 D2 D 5 6 7 G2 S2 G Q2 4 3 2 Q1 SO-8 Pin 1 SO-8 G1 S1 S S 8 1 S Absolute Maximum Ratings Symbol VDSS V.

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FDS6993 June 2003 FDS6993 Dual P-Channel PowerTrench® MOSFET General Description These P-Channel MOSFETs are made using FSC’s PowerTrench® technology. They are packaged in a single SO-8 which is designed to allow two MOSFETs to operate independenly, each with it’s own heat sink. The combination of silicon and package technologies results in minimum board space and cost. Features • Q1: P-Channel –4.3A, –30V RDS(on) = 55mΩ @ VGS = –10V • Q2: RDS(on) = 85mΩ @ VGS = –4.5V P-Channel –6.8A, –12V RDS(on) = 17mΩ @ VGS = –4.5V RDS(on) = 24mΩ @ VGS = –2.5V • RDS(on) = 30mΩ @ VGS = –1.